IndiumV3, Russie, Analysis, bibRecord, 000D83

Interaction of low-density 2DEG with acoustic phonons

Identifieur interne : 000D83 ( Russie/Analysis ); précédent : 000D82; suivant : 000D84

Interaction of low-density 2DEG with acoustic phonons

Auteurs : RBID : Pascal:99-0524621

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Gaz électron 2 dimensions, Interaction électron phonon, Hétérostructure, Effet écran, Température électron, Dépendance température, Indium arséniure, Gallium arséniure, Composé ternaire, Indium phosphure, Composé binaire, Matériau semiconducteur, InP, In P, In0,53Ga0,47As, As Ga In, 7340K.

English descriptors

KwdEn :
- Binary compounds, Electron temperature, Electron-phonon interactions, Experimental study, Gallium arsenides, Heterostructures, Indium arsenides, Indium phosphides, Screening, Semiconductor materials, Temperature dependence, Ternary compounds, Two-dimensional electron gas.

Abstract

The energy relaxation of two-dimensional electron gas (2DEG) with low density (2.2×10¹⁰ cm^-2) in selectively-doped In_0.53Ga_0.47As/InP heterostructures has been studied over a range of electron temperatures 0. 1 < T_e < 2 K. The Joule power of the dc current was employed for heating the electron gas, with the four terminal ac resistance of the sample used as electron thermometer. We found that the interaction with a screened small-angle piezoelectric potential of the acoustic phonons dominates in the temperature range 0. < T_e < 0.4 K. At higher temperatures 0.5 < T_e < 1.5 K, the change of energy balance equation is associated with a gradual transition from the small-angle interaction to a quasi-elastic one. The screening of the electron-phonon interaction and the deformation potential of acoustic phonons must be taken into consideration in this temperature range. The best fit to the data was obtained with piezoelectric constant h₁ ₄ = (0.95 ±0.05) × 10⁷ V cm^-1 and deformation potential E_D = (6 ±1) eV for both temperature ranges.

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Pascal:99-0524621

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Interaction of low-density 2DEG with acoustic phonons</title>
<author><name sortKey="Savel Ev, I G" uniqKey="Savel Ev I">I. G. Savel Ev</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya str.</s1>
<s2>St Petersburg 194021</s2>
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<country>Russie</country>
<wicri:noRegion>St Petersburg 194021</wicri:noRegion>
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</author>
<author><name sortKey="Remenyi, G" uniqKey="Remenyi G">G. Remenyi</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Centre de Recherche sur les Très Basses Temperatures, CRTBT</s1>
<s2>38042 Grenoble</s2>
<s3>FRA</s3>
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<country>France</country>
<placeName><region type="region" nuts="2">Rhône-Alpes</region>
<settlement type="city">Grenoble</settlement>
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<author><name sortKey="Kovacs, G" uniqKey="Kovacs G">G. Kovacs</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Eötvös Loránd University</s1>
<s2>1088 Budapest</s2>
<s3>HUN</s3>
<sZ>3 aut.</sZ>
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<country>Hongrie</country>
<placeName><settlement type="city">Budapest</settlement>
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<author><name sortKey="Podor, B" uniqKey="Podor B">B. Podör</name>
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<country>Hongrie</country>
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<author><name sortKey="Polyanskaya, T A" uniqKey="Polyanskaya T">T. A. Polyanskaya</name>
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<s2>St Petersburg 194021</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
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<country>Russie</country>
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<author><name sortKey="Novikov, S V" uniqKey="Novikov S">S. V. Novikov</name>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term>
<term>Electron temperature</term>
<term>Electron-phonon interactions</term>
<term>Experimental study</term>
<term>Gallium arsenides</term>
<term>Heterostructures</term>
<term>Indium arsenides</term>
<term>Indium phosphides</term>
<term>Screening</term>
<term>Semiconductor materials</term>
<term>Temperature dependence</term>
<term>Ternary compounds</term>
<term>Two-dimensional electron gas</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Gaz électron 2 dimensions</term>
<term>Interaction électron phonon</term>
<term>Hétérostructure</term>
<term>Effet écran</term>
<term>Température électron</term>
<term>Dépendance température</term>
<term>Indium arséniure</term>
<term>Gallium arséniure</term>
<term>Composé ternaire</term>
<term>Indium phosphure</term>
<term>Composé binaire</term>
<term>Matériau semiconducteur</term>
<term>InP</term>
<term>In P</term>
<term>In0,53Ga0,47As</term>
<term>As Ga In</term>
<term>7340K</term>
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<front><div type="abstract" xml:lang="en">The energy relaxation of two-dimensional electron gas (2DEG) with low density (2.2×10<sup>10</sup>
 cm<sup>-2</sup>
) in selectively-doped In<sub>0.53</sub>
Ga<sub>0.47</sub>
As/InP heterostructures has been studied over a range of electron temperatures 0. 1 < T<sub>e</sub>
 < 2 K. The Joule power of the dc current was employed for heating the electron gas, with the four terminal ac resistance of the sample used as electron thermometer. We found that the interaction with a screened small-angle piezoelectric potential of the acoustic phonons dominates in the temperature range 0. < T<sub>e</sub>
 < 0.4 K. At higher temperatures 0.5 < T<sub>e</sub>
 < 1.5 K, the change of energy balance equation is associated with a gradual transition from the small-angle interaction to a quasi-elastic one. The screening of the electron-phonon interaction and the deformation potential of acoustic phonons must be taken into consideration in this temperature range. The best fit to the data was obtained with piezoelectric constant h<sub>1</sub>
 <sub>4</sub>
 = (0.95 ±0.05) × 10<sup>7</sup>
 V cm<sup>-1</sup>
 and deformation potential E<sub>D</sub>
 = (6 ±1) eV for both temperature ranges.</div>
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 cm<sup>-2</sup>
) in selectively-doped In<sub>0.53</sub>
Ga<sub>0.47</sub>
As/InP heterostructures has been studied over a range of electron temperatures 0. 1 < T<sub>e</sub>
 < 2 K. The Joule power of the dc current was employed for heating the electron gas, with the four terminal ac resistance of the sample used as electron thermometer. We found that the interaction with a screened small-angle piezoelectric potential of the acoustic phonons dominates in the temperature range 0. < T<sub>e</sub>
 < 0.4 K. At higher temperatures 0.5 < T<sub>e</sub>
 < 1.5 K, the change of energy balance equation is associated with a gradual transition from the small-angle interaction to a quasi-elastic one. The screening of the electron-phonon interaction and the deformation potential of acoustic phonons must be taken into consideration in this temperature range. The best fit to the data was obtained with piezoelectric constant h<sub>1</sub>
 <sub>4</sub>
 = (0.95 ±0.05) × 10<sup>7</sup>
 V cm<sup>-1</sup>
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Interaction of low-density 2DEG with acoustic phonons

Interaction of low-density 2DEG with acoustic phonons

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri